Highly rugged 1200 V 80 mQ 4-H SiC power MOSFET
| Autor: | Amaury Gendron-Hansen, Ed Maxwell, Bruce Odekirk, Faheem Faheem, In-Hwan Ji, Avinash Srikrishnan Kashyap, Dumitru Sdrulla, Changsoo Hong, Mingyu Lee |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Engineering business.industry 020208 electrical & electronic engineering Electrical engineering Single pulse 02 engineering and technology 01 natural sciences Impact ionization Planar Gate oxide 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Power MOSFET business Short circuit Energy (signal processing) |
| Zdroj: | 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD). |
| DOI: | 10.23919/ispsd.2017.7988995 |
| Popis: | A novel 1200 V, 80 mΩ 4-H SiC power MOSFET with a shallow step p-body has been proposed for applications with highly rugged requirements. The innovative p-body design mitigates the problems arising due to the electric-field concentration at the corners that trigger the parasitic bipolar structure in conventional planar DMOS devices. TCAD simulations of the proposed device clearly demonstrate this improvement, along with significantly lower impact ionization rates at the corner of the p-body. The shallow step p-body approach, combined with a robust gate oxide and layout design, contributed to an industry-leading UIS capability of 2900 mJ of single pulse avalanche energy, and 5.8 μs of short circuit withstand time. |
| Databáze: | OpenAIRE |
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