μ− SR in semiconductorsSR in semiconductors

Autor:	Karin Maier, D. Herlach, Rafael Abela, W. Templ, E. Widmann, A. Seeger, W. Staiger, M. Hampele, V. Claus, Markus Koch, J. Major, W. Sigle
Rok vydání:	1991
Předmět:	Larmor precession Physics Nuclear and High Energy Physics Condensed matter physics Muon spin spectroscopy Condensed Matter Physics Acceptor Atomic and Molecular Physics and Optics Magnetic field Recoil Precession Physical and Theoretical Chemistry Atomic physics Spin (physics) Exotic atom
Zdroj:	Hyperfine Interactions. 65:1039-1045
ISSN:	1572-9540 0304-3843
DOI:	10.1007/bf02397760
Popis:	μ− SR experiments have been performed on Si between room temperature and 6 K. The amplitude of the muon spin precession signal in an applied magnetic field of 0.04 T decreased below 30 K. A zero-field measurement at 6 K revealed a μ− spin precession frequency of 650 MHz. The muonic atom represents an aluminium acceptor in the silicon matrix, its electronic state is responsible for the μSR signal. A possible influence of the γ recoil produced by the X-ray cascade is discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::842d1f325365fde5317213c3053fb65d https://doi.org/10.1007/bf02397760 Zobrazit plný text záznamu Full text from SpringerLink