Autor:	S. Sawada, N. Ookubo
Rok vydání:	2000
Předmět:	Delocalized electron Potential well Photoluminescence Materials science Condensed matter physics Mechanics of Materials Band gap Mechanical Engineering Diffusion-limited aggregation General Materials Science Electronic structure Exponential decay Porous silicon
Zdroj:	Journal of Porous Materials. 7:93-96
ISSN:	1380-2224
DOI:	10.1023/a:1009667310925
Popis:	We present the results of theoretical calculations for electronic structures and photoluminescence (PL) spectrum of porous silicon whose morphology is generated through the diffusion limited aggregation process of pores in a two-dimensional honeycomb lattice. We have found that due to irregularity of the structure most of its eigenstates near band gap are localized while some of them are relatively delocalized. The localization of the eigenstates near band gap causes band-gap narrowing analogous to the quantum confinement effect. Solving the time-dependent equations for the occupation numbers of the eigenstates, we show that the present model reproduces the stretched exponential decay of PL intensity observed in the experiments.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::841dcef8c953c4a53fb59f9256bc49a7 https://doi.org/10.1023/a:1009667310925 Zobrazit plný text záznamu Full text from SpringerLink