Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a- IGZO TFT by TCAD Simulation
| Autor: | Gregory N. Heiler, Jae Gwang Um, Timothy J. Tredwell, Md. Masum Billah, Delwar Hossain Chowdhury, Jin Jang, Mallory Mativenga, Ravi K. Mruthyunjaya |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics business.industry Transistor Electrical engineering 02 engineering and technology Negative bias 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Delta-v (physics) Active layer Threshold voltage law.invention Stress (mechanics) Thin-film transistor law Logic gate 0103 physical sciences Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | IEEE Electron Device Letters. :1-1 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2016.2557358 |
| Popis: | We report the numerical simulation of the effect of a dual gate (DG) TFT structure operating under dual gate driving on improving negative bias illumination stress (NBIS) of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). With respect to the transfer characteristics of a-IGZO TFTs, we show a larger negative threshold voltage shift ( $\Delta V_{\mathrm {TH}})$ with increasing a-IGZO active layer thickness. This trend is confirmed by TCAD simulation, where the initial transfer curve is plotted under varying a-IGZO thickness keeping a constant density of states. Under varying a-IGZO thickness, TCAD simulation results confirm TFTs under DG driving shows significantly less $\Delta V_{\mathrm {TH}}$ shift under NBIS compared with that of single gate (SG) driving TFTs. Under 10 K seconds of NBIS, TCAD simulation results show the increase in donor-like states ( $N_{\mathrm {GD}})$ by $5.25 \times 10^{17}$ cm $^{\mathrm {-3}}$ eV $^{\mathrm {-1}}$ and acceptor-like states ( $N_{\mathrm {GA}})$ by $7.5\times 10^{16}$ cm $^{\mathrm {-3}}$ eV $^{\mathrm {-1}}$ . |
| Databáze: | OpenAIRE |
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