Growth and characterizations of AlGaN/GaN heterostructures using multi-AlN buffer layers in plasma-assisted molecular beam epitaxy

Autor:	Xu-Qiang Shen, Saki Sonoda, Toshihide Ide, Hajime Okumura, Mitsuaki Shimizu, Saburo Shimizu, Sung Hwan Cho
Rok vydání:	2001
Předmět:	Electron mobility business.industry Chemistry Mineralogy Heterojunction Plasma Condensed Matter Physics Buffer (optical fiber) Inorganic Chemistry Materials Chemistry Sapphire Optoelectronics Thin film business Layer (electronics) Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :447-452
ISSN:	0022-0248
Popis:	AlGaN/GaN single heterostructures (SH) were grown on sapphire (0 0 0 1) substrates by plasma-assisted molecular beam epitaxy. It was found that multi-AlN buffer layers are effective to improve the two-dimensional electron gas (2DEG) mobility. High 2DEG mobility of about 1200 cm 2 /V s at room temperature was obtained by inserting 4 periods of AlN buffer layers. It is considered that the improvement resulted from the reduction of dislocations in the films by the multi-AlN buffer layers. It was also found that when the periods of the AlN buffer layer were 6, cracks were generated on the surface resulting in a reduction of the mobility.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8412c982e7f20ebcc7bcc3a1ced975dd https://doi.org/10.1016/s0022-0248(01)00741-2 Zobrazit plný text záznamu Full Text from ScienceDirect