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Solar energy constitutes a widely available and further free energy. Several techniques have been used to permit a convenient exploitation of this clean energy, consisting in trying to extract the maximal amount of energy from simple devices. Therefore, these techniques suffer from reduced efficiency ratio, and they are neither well exploited nor developed. In this work, III-Nitrides semiconductors have been used instead of classical silicon. They possess the faculty to work in the maximum of the solar emission spectrum, hence offering a maximal efficiency, and also, due to their high energy gap, the surface reflection materialized by the reflectance is optimally reduced, always comparing with actual silicon-made devices. The computational methods used have shown that the theoretical efficiency obtained, in our paper, is near about 35%, depending greatly on the semiconductor purity. |
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