Interface Engineering for 3-Bit per Cell Multilevel Resistive Switching in AlN Based Memristor

Autor:	Kow-ming Chang, Jia-Chuan Lin, Poshan Kumar Reddy, Om Kumar Prasad, Chien-Hung Wu, Srikant Kumar Mohanty
Rok vydání:	2021
Předmět:	Materials science Equivalent series resistance business.industry Memristor Electron Thermal conduction Standard deviation Electronic Optical and Magnetic Materials law.invention Barrier layer Reliability (semiconductor) law Optoelectronics Electrical and Electronic Engineering business Voltage
Zdroj:	IEEE Electron Device Letters. 42:1770-1773
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2021.3125151
Popis:	Gradual conduction tuning with a large memory window is essential for realizing multilevel switching memristive devices. In this work, we demonstrated 3-bit per cell storage capability with excellent endurance and retention behavior of AlN/AlO memristor via interface engineering. By incorporating an ultra-thin 2 nm Al 2 O 3 interface layer, seven distinct high resistance states with same low resistance state were achieved by controlling reset-stop voltage. In addition, by varying set compliance current, six resistance states with reliability and reproducibility were illustrated. The maximum cycle-to-cycle variability $\sigma /\mu $ (standard deviation/mean) of any resistance state was 28.7% in reset-stop voltage control methods. The multilevel switching characteristics could be attributed to (a) enhancement of on-off ratio resulted due to insertion of Al 2 O 3 barrier layer acts as series resistance (b) the gradual electron detrapping from occupied trap sites resulting in multiple intermediate resistance states during reset.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::83f534bdfc730bf4b3971b2d785d0f16 https://doi.org/10.1109/led.2021.3125151 Zobrazit plný text záznamu