Influence of External Strain on the Growth of Interfacial Intermetallic Compounds Between Sn and Cu Substrates
| Autor: | Ming-Tzer Lin, Tien-Chen Hu, Feng-Chih Hsu, An-Wen Huang |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Strain (chemistry) Metallurgy Intermetallic chemistry.chemical_element Substrate (electronics) Bending equipment and supplies Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Ultimate tensile strength Materials Chemistry Electrical and Electronic Engineering Electroplating Tin Layer (electronics) |
| Zdroj: | Journal of Electronic Materials. 41:3309-3319 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-012-2244-x |
| Popis: | This study used a four-point bending procedure to investigate the influence of compressive and tensile strain on the growth of an interfacial Cu-Sn intermetallic compound (IMC) layer. The test specimens were prepared by depositing 25 μm layers of matte or bright tin atop a copper substrate using electroplating. Samples were then placed in a furnace at 200°C, and external bending strain was applied through a strained substrate. Comparisons were made between samples undergoing tensile strain or compressive strain, and those without strain. We observed the influence of strain levels and aging time on the formation of the IMC. Both tensile and compressive strain influenced the formation of the Cu/Sn IMC. In matte tin samples, the IMC thickness increased under compressive strain and decreased under tensile strain. In contrast, in bright tin samples, the IMC thickness increased under both compressive and tensile strained substrate conditions. The growth rate of IMC was faster in strained bright tin samples than in strained matte tin samples. Moreover, the formation of IMC microscopic structures under external strain differed considerably according to the source of tin. |
| Databáze: | OpenAIRE |
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