The LPCVD of Silicon Nitride Films from Alkylazidosilanes

Autor: Herman Gene Oceanside Hockenhull, David L. O'Meara, Arthur Kenneth Hochberg, David Allen Roberts, Felicia Rusnak
Rok vydání: 1990
Předmět:
Zdroj: MRS Proceedings. 204
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-204-515
Popis: The series of azidosilanes, SiEtn(N3)4-n where n = 1,2,3 and Si(t-butyl)(N3)3 were evaluated for the LPCVD of silicon nitride thin films. Both SiEt(N3)3 and Si(t-butyl)(N3)3 gave deposition rates of approximately 100 Å/min at temperatures of 450–500°C but films appear to be porous and air sensitive. Film properties improved as deposition temperatures were increased to 600°C. The polyazides must be handled with extreme caution. An unexplained detonation of one sample of SiEt(N3)3 occurred during the course of this study.
Databáze: OpenAIRE
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