A simple d.c. based method for monitoring transistor capacitance
| Autor: | Kuntal Joardar |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
business.industry Transistor Condensed Matter Physics Capacitance Electronic Optical and Magnetic Materials law.invention Volume measurements law Simple (abstract algebra) Materials Chemistry Electronic engineering Optoelectronics Electrical and Electronic Engineering business p–n junction |
| Zdroj: | Solid-State Electronics. 39:1193-1198 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(96)00026-3 |
| Popis: | A new methodology for measuring p n junction capacitance is demonstrated. The method is d.c. based making it suitable for use in automated high volume measurements. The validity of the technique is supported by both simulated and experimentally measured data. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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