Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier

Autor:	K. Požela, G. B. Galiev, A. Šilėnas, V. Jucienė, E. A. Klimov, J. S. Vasil’evskii, J. Požela
Rok vydání:	2012
Předmět:	Physics Electron mobility Electron density Drift velocity Condensed matter physics Phonon Electric field Doping General Materials Science General Chemistry Electron scattering Quantum well
Zdroj:	Applied Physics A. 109:233-237
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s00339-012-7039-7
Popis:	The alternating change of electron mobility values in the modulation doped InAlAs/InGaAs/InAlAs quantum well (QW) dependently on a thickness of the InAs layer inserted in the center of the QW is theoretically predicted and experimentally observed. The electron mobility enhancement by a factor of 1.5–2 takes place when the 4 nm-thick InAs layer is inserted into the 17 nm-width QW. The experimental maximal value of the electron drift velocity at the threshold electric field for intervalley electron scattering achieves (1.8−2)×107 cm/s and does not nearly depend on the thickness of the InAs insert. The high value of maximal drift velocity is conserved at the additional doping of the InAs insert up to electron density of 4×1012 cm−2 in the QW.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::83ceaa9d67138cd5d2884f53c312287d https://doi.org/10.1007/s00339-012-7039-7 Zobrazit plný text záznamu Plný text ve formátu PDF