Passivation and Annealing for Improved Stability of High Performance IGZO TFTs

Autor: Robert George Manley, N. Walsh, Tarun Mudgal, Karl D. Hirschman
Rok vydání: 2014
Předmět:
Zdroj: MRS Proceedings. 1692
ISSN: 1946-4274
0272-9172
DOI: 10.1557/opl.2014.906
Popis: The influence of annealing ambient conditions and deposited passivation materials on indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) performance is investigated. Results from annealing experiments confirm that a nominal exposure to oxidizing ambient conditions is required, which is a function of temperature, time and gas environment. Nitrogen anneal with a controlled air ramp-down provided the best performance devices with a mobility (µsat) of 11-13 cm2/V·s and subthreshold slope (SS) of 135-200 mV/dec, with some hysteresis. Plasma-deposited passivation materials including sputtered quartz and PECVD SiO2 demonstrated a significant increase in material conductivity, which was not significantly reversible by an oxidizing ambient anneal. E-beam evaporated Al2O3 passivated devices that were annealed in air at 400 °C demonstrated improved stability over time and suppressed hysteresis in comparison to unpassivated devices. Devices which were passivated with B-staged bisbenzocyclobutene-based (BCB) resins and annealed in air at 250 °C also exhibited suppressed hysteresis.
Databáze: OpenAIRE
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