| Autor: |
H. Kahlert, H. Salow, G. Landwehr, J. Geiger, A. Schlachetzki |
| Rok vydání: |
1974 |
| Předmět: |
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| Zdroj: |
Proceedings of the Twelfth International Conference on the Physics of Semiconductors ISBN: 9783519030133 |
| DOI: |
10.1007/978-3-322-94774-1_45 |
| Popis: |
Magnetotransport properties of epitaxially grown n-GaAs were investigated between 1.6 and 10 K in magnetic fields up to 60 kG. Below 5 K the dominant conduction mechanism is the hopping process. The hopping resistivity ρ3 depends on the donor concentration ND according to ρ3 ∝ exp(1.88/ ND 1/3a) in agreement with predictions of percolation theory, where a is the Bohr radius of the impurity ground state. The dependence of the resistivity on the magnetic field is quantitatively described by formulas derived from percolation considerations. In the non-ohmic region breaks were detected in the current-voltage characteristic at electric fields well below the impact ionization of the shallow donors. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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