| Autor: |
T. Hansen, G. Storaska, Rowland C. Clarke, K. Elliott, J. Zingaro, Andris Ezis, D. Hits, S. Van Campen, K. Roe, Mark E. Thompson, V. Temple |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
Proceedings. IEEE Lester Eastman Conference on High Performance Devices. |
| DOI: |
10.1109/lechpd.2002.1146732 |
| Popis: |
In this paper, we report on asymmetric SiC GTOs (gate turn-off thyristors), fabricated at Northrop Grumman with the assistance of Silicon Power Co. A module containing six 1 mm/spl times/1 mm GTOs connected in parallel has demonstrated 100 A of switching current capability. This is the highest current reported to date with GTOs designed for greater than 3 kV forward blocking voltage. GTOs fabricated from the same wafer have achieved a forward blocking voltage of 3.1 kV, which was the testing limit of the instrumentation. This represents a record high breakdown voltage for GTOs with a drift layer thickness of 30 /spl mu/m. These GTOs also demonstrated record low leakage currents of |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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