Simulation of a Recessed Channel Ferroelectric-Gate Field-Effect Transistor with a Dual Ferroelectric Gate Stack for Memory Application
| Autor: | Simin Chen, Dae-Hwan Ahn, Seong Ui An, Younghyun Kim |
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| Rok vydání: | 2023 |
| Zdroj: | 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). |
| Databáze: | OpenAIRE |
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