Direct epitaxial integration of the ferromagnetic semiconductor EuO with Si(1 1 1)
| Autor: | Igor A. Karateev, Dmitry V. Averyanov, Oleg E. Parfenov, Oleg A. Kondratev, Vyacheslav G. Storchak, Alexander N. Taldenkov, Andrey M. Tokmachev, Ivan S. Sokolov |
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| Rok vydání: | 2018 |
| Předmět: |
Fabrication
Materials science Spin polarization Spintronics Silicon business.industry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials Monocrystalline silicon Condensed Matter::Materials Science chemistry Magnet 0103 physical sciences Optoelectronics Condensed Matter::Strongly Correlated Electrons 010306 general physics 0210 nano-technology Spin (physics) business |
| Zdroj: | Journal of Magnetism and Magnetic Materials. 459:136-140 |
| ISSN: | 0304-8853 |
| DOI: | 10.1016/j.jmmm.2017.11.062 |
| Popis: | Facing physical limits to further development, modern electronics explores alternative approaches. One of the most promising routes is offered by spintronics employing spin degree of freedom. Silicon spintronics is especially important due to the central technological role of Si. This technology requires non-equilibrium spin polarization in non-magnetic Si. The ferromagnetic semiconductor EuO has been justified as a promising candidate for electrical spin injection into Si. Here, we report the first fabrication of the EuO(1 1 1)/Si(1 1 1) structure – a magnetic material with a polar heterointerface – employing a special synthetic procedure. Structural characterization proves an atomically sharp interface and monocrystalline quality of the films while magnetic measurements match the bulk properties of EuO. |
| Databáze: | OpenAIRE |
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