A 3.2 Gbps VCSEL driver implemented in 0.18μm CMOS

Autor:	Fei Liu, Michael B. Venditti, Alan E.L. Chuah, David V. Plant
Rok vydání:	2003
Předmět:	Engineering Threshold current CMOS Modulation business.industry Slope efficiency Electrical engineering Optical power business Vertical-cavity surface-emitting laser
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.474329
Popis:	We report on the performance of a 3.2 Gb/s VCSEL driver implemented in foundry n-well 0.18μm CMOS technology. The VCSEL driver utilizes a novel push-pull circuit topology that pushes and pulls modulation current into and out of the VCSEL cavity thus producing symmetric rising and falling edges. Using a commercial VCSEL with a threshold current of 1.2 mA and a slope efficiency of 0.3 mW/mA, the circuit was operated at 1.25, 2.5 and 3.2 Gb/s and produced 2.5 mW of average optical power.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::83a37112243e0baad018b989fe23279f https://doi.org/10.1117/12.474329 Zobrazit plný text záznamu