Polarization properties of nonpolar ZnO films grown on R-sapphire substrates using high-temperature H2O generated by a catalytic reaction
| Autor: | Shotaro Ono, Munenori Ikeda, Kanji Yasui, Yudai Adachi, Ryouichi Tajima, Ariyuki Kato |
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| Rok vydání: | 2017 |
| Předmět: |
Diffraction
Photoluminescence Materials science Dimethylzinc Analytical chemistry 02 engineering and technology 01 natural sciences Condensed Matter::Materials Science chemistry.chemical_compound 0103 physical sciences Materials Chemistry 010302 applied physics business.industry Linear polarization Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology Polarization (waves) Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Sapphire Degree of polarization Optoelectronics 0210 nano-technology Luminescence business |
| Zdroj: | Thin Solid Films. 644:29-32 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2017.06.062 |
| Popis: | Nonpolar ZnO films were grown on r-plane sapphire substrates through the reaction between dimethylzinc (DMZn) and high-temperature H 2 O, the latter produced by the Pt-catalyzed reaction between H 2 and O 2 . The resulting ZnO films were characterized using atomic force microscopy, X-ray diffraction, and photoluminescence (PL) measurements. They were found to have an anisotropic surface morphology with stripe arrays, and exhibited a diffraction peak associated with ZnO (11-20) index planes. The PL spectra indicated anisotropy in polarization between the directions parallel and perpendicular to the c-axis. The band-edge luminescence at 3.3 eV exhibited a maximum when the electric field vector E was perpendicular to the c-axis (parallel to the [1-100] direction) and another minimum when E was parallel to the c-axis. The angular dependence of the linear polarization of the band-edge luminescence was large for ZnO films grown at low temperatures. The large degree of polarization observed for low-temperature growth is thought to be due to the film geometry. |
| Databáze: | OpenAIRE |
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