Gold-compensated high resistivity silicon as low-loss microwave substrate

Autor:	Cornelius H. de Groot, Nur Zatil Ismah Hashim
Rok vydání:	2018
Předmět:	High resistivity silicon Materials science Silicon Annealing (metallurgy) business.industry Attenuation Doping technology industry and agriculture chemistry.chemical_element Integrated circuit Conductivity law.invention chemistry law Optoelectronics business Microwave
Zdroj:	2018 Australian Microwave Symposium (AMS).
DOI:	10.1109/ausms.2018.8346970
Popis:	Deep level doping compensation concept using elemental gold is utilised to create effectively high resistivity silicon substrates for the use in GHz range. Bias-dependent substrate losses associated with parasitic surface conduction is fully suppressed, indicated by the constant attenuation loss of 0.19 dB/mm at 40 GHz for the coplanar waveguides fabricated on the substrates. In addition to that, the incorporation of slow-cooling treatment in the annealing procedure proves that further increase in substrate resistivity can be achieved for Czochralski-grown silicon substrates, rising up its potential as one of the alternative substrates for radio-frequency monolithic microwave integrated circuits applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::839ecc4dd9906bff472334975ea667ca https://doi.org/10.1109/ausms.2018.8346970 Zobrazit plný text záznamu