High-Throughput Screening of Amorphous $\hbox{Y}_{2} \hbox{O}_{3}$–$\hbox{TiO}_{2}\hbox{/}\hbox{SiO}_{2}$ Higher $\kappa$ Gate Dielectric Layers
| Autor: | Kao-Shuo Chang, E. Venkatasubramanian, Martin L. Green, P. K. Schenck, I. Levin |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Permittivity
Materials science Silicon business.industry Annealing (metallurgy) Gate dielectric chemistry.chemical_element Dielectric Electronic Optical and Magnetic Materials Pulsed laser deposition Amorphous solid chemistry Transmission electron microscopy Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 59:3212-3216 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2012.2216533 |
| Popis: | In this paper, an approach using native SiO2 to make amorphous higher dielectric constant films based on the Y2O3-TiO2/SiO2/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution transmission electron microscopy results show that the TiO2-rich end is amorphous after 500°C anneal. A wide composition range near the TiO2-rich end, exhibiting amorphousness, dielectric constants of 30-50, and reasonably low JL ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|