Growth of self-assembled and position-controlled InN nanowires on Si (1 1 1) by molecular beam epitaxy
| Autor: | Maria de la Mata, Saskia Weiszer, Andreas Zeidler, Martin Stutzmann |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Kelvin probe force microscope Materials science business.industry Oxide Nanowire chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Inorganic Chemistry chemistry.chemical_compound chemistry 0103 physical sciences Microscopy Scanning transmission electron microscopy Materials Chemistry Optoelectronics 0210 nano-technology business Indium Wurtzite crystal structure Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 510:56-64 |
| ISSN: | 0022-0248 |
| Popis: | This work presents a systematic growth study of self-assembled and position-controlled InN nanowires (NWs) on Si (1 1 1) substrates by plasma-assisted molecular beam epitaxy without using a buffer layer. By variation of the substrate temperature, the III/V flux ratio, and the growth time, optimal parameters for self-assembled and position-controlled NW growth are found and compared. This leads to a fundamental understanding of the underlying growth mechanism for InN NW formation. Scanning transmission electron microscopy measurements of a self-assembled InN NW show a wurtzite crystal structure with a hexagonal cross-section and flat lateral facets covered by an approximately 5 nm thick indium oxide shell. In addition, Kelvin probe force microscopy measurements indicate the existence of both lattice polarities in case of self-assembled InN NWs. |
| Databáze: | OpenAIRE |
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