Influence of magnetic field on structural defects in Si and GaAs
| Autor: | V.A. Skryshevsky, V.A. Brodovoy, A.V. Brodovoy |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Condensed matter physics
Silicon Condensed Matter::Other Chemistry Photoconductivity Semiconductor materials General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Indentation hardness Magnetic susceptibility Surfaces Coatings and Films Magnetic field Condensed Matter::Materials Science Impurity Surface states |
| Zdroj: | Applied Surface Science. 225:170-175 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2003.09.049 |
| Popis: | The influence of a weak magnetic field on the behavior of structural defects in Si and GaAs has been studied by the methods of photoconductivity, magnetic susceptibility and microhardness. The impurity photoconductivity of mechanically damaged GaAs and the remarkable reduction of induced photoconductivity after exposition in magnetic field of 0.3 T were observed. These effects are much less pronounced for Si samples. The potential fluctuations created by charge defects are invoked to explain the magnetic field influence on structural defects. |
| Databáze: | OpenAIRE |
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