A Novel Trench Gate MOS Turn-off GCT Structure
| Autor: | Cailin Wang, Jing Yang, Jingtao Ge, Wu Yun |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences PMOS logic Planar Turn off 0103 physical sciences Trench Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Optoelectronics Commutation business Hardware_LOGICDESIGN Trench gate Voltage |
| Zdroj: | 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). |
| DOI: | 10.1109/edssc.2019.8754319 |
| Popis: | A novel trench gate MOS turn-off GCT (TMOS-GCT) is proposed in this paper, in which a trench pMOS is induced between the conventional gate and the main GCT cell. The turn-on of T-MOS-GCT is controlled by current signals applied to the conventional gate, and the turn-off of TMOS-GCT is controlled by voltage signals applied to the trench gate, thus the T-MOS-GCT can achieve internal commutation. The internal commutation mechanism and characteristics are studied by Sentaurus-TCAD simulator, the results show that T-MOS-GCT can obviously improve turn-off current capability compared with planar gate MOS-GCT (PMOS-GCT). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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