Origin of 1/f3/2noise in GaAs thin-film resistors and MESFET's
| Autor: | J. Graffeuil, J.-L. Cazaux, M. Pouysegur |
|---|---|
| Rok vydání: | 1987 |
| Předmět: |
Engineering
business.industry Infrasound Electrical engineering Electronic Optical and Magnetic Materials law.invention Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound Noise chemistry law Optoelectronics Field-effect transistor Flicker noise MESFET Electrical and Electronic Engineering Resistor business Sheet resistance |
| Zdroj: | IEEE Transactions on Electron Devices. 34:2178-2184 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/t-ed.1987.23214 |
| Popis: | This paper addresses the problem of 1/f3/2low-frequency noise in GaAs thin-film resistors and MESFET's. Experimental data seem to rule out the existence of the so-called "diffusion noise" usually invoked in GaAs devices. Therefore, we propose a new "surface thermal-noise" model based on the existence of lumped thermal-noise generators distributed along the semiconductor-air or semiconductor-dielectric protection interface. The observed dependence of the low-frequency noise on the surface resistance of different MESFET's supports our conclusions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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