Fabrication and characterization of junctionless MOSFETs for sensor applications
| Autor: | Jolanta Malesinska, Michal Zaborowski, Piotr Grabiec, Daniel Tomaszewski |
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| Rok vydání: | 2014 |
| Předmět: |
Resistive touchscreen
Single process Fabrication Materials science business.industry Transistor Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY law.invention Characterization (materials science) Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Wafer Electrical measurements business Hardware_LOGICDESIGN |
| Zdroj: | MIXDES |
| DOI: | 10.1109/mixdes.2014.6872220 |
| Popis: | A method for fabrication of junctionless SOI MOS devices for sensor applications is presented in the paper. Two groups of devices, namely FinFET-type devices, and wide MOSFETs have been designed and manufactured in a single process sequence on the same wafer. Electrical measurements of the MOSFETs as well characterization work have been carried out. The characterization work is based on a proposed model of junctionless MOSFETs and is focused on analysis of the symmetry between the resistive lines connecting the transistor active area with the pads. |
| Databáze: | OpenAIRE |
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