Growth and properties of radio frequency reactively sputtered titanium nitride thin films
| Autor: | Kambiz Pourrezaei, M.G. Fissel, E. C. Douglas, T. Begley, N. Kumar, B. Lee |
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| Rok vydání: | 1987 |
| Předmět: |
Auger electron spectroscopy
Materials science Diffusion barrier Scanning electron microscope Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Partial pressure Condensed Matter Physics Titanium nitride Surfaces Coatings and Films chemistry.chemical_compound chemistry Sputtering Thin film Tin |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:1778-1782 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.574494 |
| Popis: | Polycrystalline thin films of titanium nitride with a resistivity in the range 20–25 μΩ cm have been consistently produced on water‐cooled silicon wafers by using reactive sputtering of a titanium target in Ar/N2 mixture. The variations of resistivity and the deposition rate as the functions of N2 partial pressure and applied substrate bias voltage are investigated. The N2 partial pressure as a function of nitrogen flow rate is plotted for various radio frequency (rf) power levels. The TiN films have been characterized by a wide variety of analytical techniques, such as Rutherford backscattering (RBS), Auger electron spectroscopy (AES), x‐ray diffraction (XRD), scanning electron microscopy (SEM), and four‐point probe. These films are golden yellow in color. RBS shows these films to be stoichiometric and AES shows them to be free of any measurable oxygen. Two multilayer metallization systems (Si/TiN/Al and Si/Ti/TiN/Al) were built to test the effectiveness of these films as a diffusion barrier. Preliminary... |
| Databáze: | OpenAIRE |
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