Monte Carlo simulation of epitaxial growth of GaInAsSb films

Autor:	L. Tirado-Mejía, Manuel Eduardo Ríos-Olaya, Jheison Alejandro Morales
Rok vydání:	2014
Předmět:	Work (thermodynamics) Engineering Computer simulation business.industry Monte Carlo method General Engineering Epitaxy Condensed Matter::Materials Science Semiconductor Thermophotovoltaic Dynamic Monte Carlo method Optoelectronics Statistical physics Kinetic Monte Carlo business
Zdroj:	DYNA. 81:184-192
ISSN:	2346-2183 0012-7353
DOI:	10.15446/dyna.v81n187.40991
Popis:	Material engineering finds an important support on simulation methods. The study of semiconductors growth techniques through simulation allows the determination of the influence of some growth parameters on the film properties. Experimentally, the variations of these parameters are difficult due to the high experimental demands and expenses. In this work we present the numerical simulation of the epitaxial growth of GaInAsSb by three methods. Devices based on this semiconductor material are thermophotovoltaic generators. The solid-on-solid approximation was used, considering the unit cell formed by the four constituent elements, in the establish proportions according to the choose stoichiometry. Through the Kinetic Monte Carlo method we obtained a high coincidence between the simulated film morphology and the obtained in the experimentally grown films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::83578630e142c7ed1fa5d107d27746c7 https://doi.org/10.15446/dyna.v81n187.40991 Zobrazit plný text záznamu Plný text ve formátu PDF