A Lambert-Function Charge-Based Methodology for Extracting Electrical Parameters of Nanoscale FinFETs

Autor:	Charalabos A. Dimitriadis, A. Tsormpatzoglou, Gerard Ghibaudo, N. Fasarakis, D. H. Tassis, K. A. Papathanasiou
Rok vydání:	2012
Předmět:	Materials science Attenuation Charge (physics) Function (mathematics) Electronic Optical and Magnetic Materials Threshold voltage symbols.namesake Nonlinear system Lambert W function Logic gate MOSFET symbols Electronic engineering Electrical and Electronic Engineering
Zdroj:	IEEE Transactions on Electron Devices. 59:3299-3305
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2012.2222647
Popis:	We developed a new Y-based methodology for extracting the electrical parameters in modern nanoscale double-gate and triple-gate FinFET devices. Using the drain-current equation in the linear region, which involves the Lambert W -function of the charge at the source, the nonlinear Y-function in these devices is reduced to the linear one of a traditional long-channel MOSFET. The derived new Y-function can be readily applied and evaluate all electrical parameters in a traditional fashion, since all related curves are now linear and easily extrapolated. The present methodology for extracting the electrical parameters was verified in both simulated and experimental nanoscale FinFETs, demonstrating its simplicity and good accuracy.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::83563c1ee36255a933cf48a0692a1594 https://doi.org/10.1109/ted.2012.2222647 Zobrazit plný text záznamu