SiGe heterojunction bipolar transistor issues towards high cryogenic performances

Autor:	Frédéric Aniel, E Ramirez-Garcia, Pascal Chevalier, Alain Chantre, Nicolas Zerounian, Paul Crozat, M. Enciso-Aguilar
Rok vydání:	2009
Předmět:	Materials science business.industry Terahertz radiation Heterojunction bipolar transistor General Physics and Astronomy Transit time Cryogenics Noise figure Noise (electronics) Equivalent noise resistance Optoelectronics General Materials Science business Electronic circuit
Zdroj:	Cryogenics. 49:620-625
ISSN:	0011-2275
Popis:	The performances increase at low temperature make the SiGe HBT a masterpiece for cryogenic circuits. The time-progressive enhancement of fT and fMAX toward the THz frequency at room and at cryogenic temperatures is presented along with STMicroelectronics and IBM successive HBTs generations. The influence of the Ge content and graduality into the base is discussed, highlighting the keys for best high-frequency cryogenic operation. This is shown with eight different cases and addressed on fT, fMAX, the transit time, the minimum noise figure and the equivalent noise resistance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::835639b41cc0e25ae95e779cdd580c39 https://doi.org/10.1016/j.cryogenics.2008.11.006 Zobrazit plný text záznamu Full Text from ScienceDirect