Sample Preparation methodology for ultra thin oxide damage in Metal–Insulator–Metal capacitors
| Autor: | Giancarlo Calvagno, D. Mello, Andrea Jossa, Giuseppe Muni |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Oxide Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Capacitor Planar chemistry law Electronic engineering Optoelectronics Sample preparation Metal insulator metal capacitor Electrical and Electronic Engineering Safety Risk Reliability and Quality business Thin oxide Layer (electronics) |
| Zdroj: | Microelectronics Reliability. 52:2064-2067 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2012.06.128 |
| Popis: | High density capacitors Metal–Insulator–Metal (MIM) are often built with a thin oxide layer having a high dielectric constant. The failure mechanisms involving capacitors weakness can be caused by dielectric oxide crack. To identify a micro-crack in an area in the range of square millimetre a planar view observation is requested. In this work the Sample Preparation on MIM structure in order to observe the untouched dielectric oxide is shown. A real case of Failure Analysis has been reported in which a very thin oxide crack on MIM structure has been found. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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