Light switching of resistance of LBMO/ZnO hetero p-n junction

Autor:	Yusuke Nakamura, Hiroaki Nishikawa, Sanapa Lakshmi Reddy, Tamio Endo, Miyoshi Yokura, W. Choi, Satoru Kaneko, Masatsugu Nagashima, S. Nonomura, Nobuyuki Iwata
Rok vydání:	2015
Předmět:	Resistive touchscreen Materials science chemistry business.industry Optoelectronics chemistry.chemical_element Zinc business p–n junction
Zdroj:	2015 International Conference on Microwave and Photonics (ICMAP).
DOI:	10.1109/icmap.2015.7408775
Popis:	La(Sr)MnO3 and La(Ba)MnO3 (LBMO) are fabricated on ZnO for novel p-n junction sensitive to UV light. In-plane orientational growths are clarified. LBMO/ZnO shows huge light amplification of current which indicates phase-related resistive change in LBMO by light.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::83425c239087b8043b4491fb12681375 https://doi.org/10.1109/icmap.2015.7408775 Zobrazit plný text záznamu