Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors
| Autor: | Michael Krieger, Heiko B. Weber, Sebastian Roensch, Stefan Hertel, Sergey A. Reshanov, Adolf Schöner |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Deep-level transient spectroscopy business.industry Graphene Mechanical Engineering Activation energy Condensed Matter Physics Capacitance law.invention chemistry.chemical_compound Cross section (physics) chemistry Mechanics of Materials law Silicon carbide Optoelectronics General Materials Science Field-effect transistor Epitaxial graphene business |
| Zdroj: | Materials Science Forum. :436-439 |
| ISSN: | 1662-9752 |
| Popis: | The electrically active deep levels in a graphene / silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the activation energy, the capture cross section and the trap concentration. We observed three defect centers corresponding to the intrinsic defects E1/E2, Ei and Z1/Z2 in n-type 6H-SiC. The determined parameters have been verified by conventional capacitance DLTS. |
| Databáze: | OpenAIRE |
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