Solid-Phase Transformations in Multilayered (Co40Fe40B20)34(SiO2)66–ZnO (SnO2, In2O3) Films
| Autor: | V. A. Makagonov, Yu. E. Kalinin, I. V. Babkina, M. A. Kashirin, O. V. Zhilova, A. V. Sitnikov |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science 010308 nuclear & particles physics business.industry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Thermal treatment Substrate (electronics) 01 natural sciences Layer thickness Buffer (optical fiber) Semiconductor chemistry Sputtering Phase (matter) 0103 physical sciences business Boron |
| Zdroj: | Bulletin of the Russian Academy of Sciences: Physics. 83:1116-1121 |
| ISSN: | 1934-9432 1062-8738 |
| DOI: | 10.3103/s1062873819090119 |
| Popis: | Multilayered [(Co40Fe40B20)34(SiO2)66/ZnO]112, [(Co40Fe40B20)34(SiO2)66/SnO2]32, and [(Co40Fe40B20)34(SiO2)66/In2O3]92 films with layers 1 nm thick are obtained via the ion-beam sputtering of two targets onto a rotating substrate. Their phase transformations are studied during the thermal treatment of films. Compounds with boron form in films with ZnO and In2O3 buffer layers (Co2FeO2(BO3) and InBO3, respectively). The composition of these compounds is found to depend on the semiconductor that is used and the ratio of layer thickness. |
| Databáze: | OpenAIRE |
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