Low turn-off switching energy 1200 V IGBT module

Autor: E.R. Motto, J. Yamada, J.F. Donlon, Y. Ishimura, Y. Yu
Rok vydání: 2003
Předmět:
Zdroj: Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).
Popis: A new 5th generation IGBT module with low turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial power supplies in applications such as X-ray, MRI (magnetic resonance imaging), and induction heating. This technology is designed to provide a simplified cost effective alternative to parallel discrete MOSFETs in these applications.
Databáze: OpenAIRE