Transport properties of Si-doped $\boldsymbol{\beta}-\mathbf{Ga}_{\boldsymbol{2}}\mathbf{O}_{\boldsymbol{3}}$ grown by liquid-injection MOCVD

Autor:	F. Egyenes, F. Gucmann, E. Dobrocka, M. Mikolasek, K. Husekova, M. Tapajna
Rok vydání:	2022
Zdroj:	2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
DOI:	10.1109/asdam55965.2022.9966793
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8327770148c7af458689baceadfac67b https://doi.org/10.1109/asdam55965.2022.9966793 Zobrazit plný text záznamu