Roughness improvement of the CoSi2/Si-interface for an application as buried silicide
| Autor: | Qing-Tai Zhao, M. Wiemer, V. Dudek, Sven Zimmermann, H. Höhnemann, Siegfried Prof. Dr. Mantl, Thomas Gessner, C. Kaufmann |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon business.industry Silicon on insulator chemistry.chemical_element Substrate (electronics) engineering.material Condensed Matter Physics Salicide Epitaxy Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Polycrystalline silicon chemistry Silicide engineering Optoelectronics Electrical and Electronic Engineering business Layer (electronics) |
| Zdroj: | Microelectronic Engineering. 84:2537-2541 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2007.05.056 |
| Popis: | The material CoSi"2 is preferred for the fabrication of buried silicide films between silicon device layer and buried oxide of SOI substrates for BICMOS integrations. Such an application needs excellent quality of the interface between the silicide and the silicon device layer. Using the conventional cobalt salicide process the roughness and waviness of the interface is too large for a device application. In this presentation three technologies to improve the CoSi"2/Si-interface quality were characterized. Using the first technology a very thin single crystalline CoSi"2 film was fabricated on a silicon substrate. This film acts as initial layer to produce thicker single crystalline silicide films. By the second technology an interlayer between cobalt and the silicon substrate was used to mediate an epitaxial CoSi"2 growth. Different types and materials were tested. Using the third technique a sacrificial layer of polycrystalline silicon between cobalt and the silicon substrate was consumed during the silicidation reaction. This method gives the best results with interface roughness values of less than 1nm. The interface roughness was measured after CoSi"2 removal using AFM. A possible epitaxial growth of the silicide films was investigated with XRD analysis. Cross sectional SEM images were prepared to analyze the interface waviness and the CoSi"2 structure. |
| Databáze: | OpenAIRE |
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