Nanoscale Al patterning on an STM-manipulated Si surface
| Autor: | Kimitaka Minami, H. Hamanaka, Toru Kurabayashi, Takahito Ono, Masayoshi Esashi |
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| Rok vydání: | 1996 |
| Předmět: |
Nanostructure
Hydrogen Silicon Hydride Metals and Alloys Analytical chemistry chemistry.chemical_element Nanotechnology Surfaces and Interfaces Substrate (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Adsorption chemistry Torr Materials Chemistry Deposition (law) |
| Zdroj: | Thin Solid Films. :640-643 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(96)08705-6 |
| Popis: | Selective deposition of H atoms on silicon was achieved by using a UHV-STM with a Pd tip. The deposition of hydrogen atoms occurs on the Si(100) 2×1 surface at a negative sample bias in a pressure of 1×10 −10 Torr. The H atom adsorbed sites appear dark in a constant current mode in an STM image. H atoms are supplied from the Pd tip, while, at a positive bias, adsorbed H atoms get desorbed. The surface was selectively oxidized by exposing it to oxygen (1.0 × 10 −5 Torr, 60 s, at room temperature). Nanoscale Al patterns were made by selective Al CVD on the H-termtnated Si surface using DMAH (dirnethylaluminium hydride) as a gas source. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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