Interaction between monolithic, junction-isolated lateral insulated-gate bipolar transistors
| Autor: | Deva Narayan Pattanayak, William Andrew Hennessy, Bantval Jayant Baliga, Michael S. Adler, C.E. Logan, T.P. Chow |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
business.industry Bipolar junction transistor Doping Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Insulated-gate bipolar transistor Integrated circuit Chip Electronic Optical and Magnetic Materials law.invention law Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor Power semiconductor device Electrical and Electronic Engineering business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Transactions on Electron Devices. 38:310-315 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.69911 |
| Popis: | The static and dynamic interaction between monolithically integrated n- and p-channel, high-voltage lateral insulated-gate bipolar transistors (LGBTs) are studied. In the chosen system partition, three common-source, n-channel LIBGTs are monolithically integrated on one chip using junction isolation, while the p-channel counterparts are on a separate chip. Devices on lightly doped substrates, despite their higher forward drop and longer turn-off time than those on heavily doped substrates, exhibited a lesser degree of interaction with adjacent devices, and thus are preferable for power ICs. Even though the steady-state current that flows into the emitters of adjacent devices in the ON-state is small ( > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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