| Autor: |
F. Kessler, H.-D. Mohring, Gottfried H. Bauer |
| Rok vydání: |
1991 |
| Předmět: |
|
| Zdroj: |
Journal of Non-Crystalline Solids. :745-748 |
| ISSN: |
0022-3093 |
| DOI: |
10.1016/s0022-3093(05)80228-5 |
| Popis: |
A novel plasma jet technique has been applied for a-Ge:H film deposition basing upon the excitation of nobel/inert gases like He, Ar, or H2 by a large area dielectric barrier ac-discharge. The spatial distribution of radicals generated from GeH4 has been analyzed in terms of growth rates of films deposited on thin quartz fibers located in parallel to the jet axis assuming one predominant type of film forming radical. Spatial distribution of exciting species, GeHx-radical formation and film deposition rates have been modeled by analytical solution of transport equations. From the fit of theoretical data and experiment, two parameters c and a containing reaction rates and diffusion coefficients of the gases have been deduced. Best a-Ge:H films have been grown at substrate temperatures of Ts = (160–220)°C with H2-jet at high excitation energy and PDS-Urbach energies of (51–53)meV. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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