| Autor: |
S. C. Sun, Chih Chen, J. C. Lou |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Proceedings of 4th International Conference on Solid-State and IC Technology. |
| DOI: |
10.1109/icsict.1995.499639 |
| Popis: |
A new technique of MOSFET gate dielectric formation by rapid thermal oxidation is proposed. Gate oxynitride was first grown in N/sub 2/O and then annealed by in-situ rapid thermal NO-nitridation. This approach has the advantage of providing a higher nitrogen accumulation at the Si/SiO/sub 2/ interface than either pure N/sub 2/O oxynitride or nitridation of SiO/sub 2/ in the NO ambient. It is also applicable to a wide range of oxide thicknesses because the initial rapid thermal N/sub 2/O oxidation rate is not as self-limited as NO oxidation. The resulting gate dielectrics have reduced charge trapping, lower stress-induced leakage current and significant resistance to interface state generation under electrical stress. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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