A systematic study of MOCVD grown InP/InGaAIAs heterojunction bipolar transistors with anomalous switching behavior
| Autor: | Cheng-Zu Wu, C. Y. Chuen, Wei-Chou Wang, Wen-Hui Chiou, Chih-Hung Yen, Chin-Chuan Cheng, Wen-Chau Liu |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry Bipolar junction transistor General Physics and Astronomy Binary compound Heterojunction Nanotechnology Quaternary compound Avalanche multiplication chemistry.chemical_compound chemistry Indium phosphide Optoelectronics Metalorganic vapour phase epitaxy Commutation business |
| Zdroj: | Le Journal de Physique IV. 11:Pr3-957 |
| ISSN: | 1155-4339 |
| DOI: | 10.1051/jp4:20013120 |
| Popis: | A new S-shaped switch based on the InP/InGaAlAs material system has been successfully fabricated and demonstrated. Due to the avalanche multiplication and potential redistribution process, the interesting multiple-negative-differential-resistance (MNDR) is found under the inverted operation mode at room temperature. The three-terminal NDR characteristics are investigated under the applied base current I B . Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics at 77K are also observed. The switching behaviors demonstrate that the proposed structure is a good candidate for multiple-valued logic applications. |
| Databáze: | OpenAIRE |
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