Plasma deposition and characterization technologies for structural and coverage optimization of materials for nanopatterned devices

Autor:	B. Gittleman, M. Stowell
Rok vydání:	2015
Předmět:	Materials science Plasma deposition Insulator (electricity) Nanotechnology Semiconductor device Technology development Nanoscopic scale Metrology
DOI:	10.1016/b978-1-78242-228-0.00015-6
Popis:	This chapter advocates for the need to engineer the structure of materials deposited in nanoscale features so that the completed device can achieve optimum performance and have good reliability. The examples used to illustrate this point are Cu interconnects for semiconductor devices and the SiO2 insulator layer used for plasma displays. The critical role deposition source technology plays in achieving properly engineered films and the modeling required to optimize source technology will be discussed in detail. The benefits of metrology techniques that allow for assessment of the structure of materials inside nanopatterned features will also be elaborated on. Optimized nanopatterned feature coverage and film properties from the culmination of Cu and SiO2 process and source technology development will be presented. A commentary on future trends in Cu interconnects and plasma displays will bring the chapter to a close.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::82fa7e73f70979bdeec7463e38cf0f8f https://doi.org/10.1016/b978-1-78242-228-0.00015-6 Zobrazit plný text záznamu