Pore Sealing of Porous Ultralow-k Dielectrics by Self-Assembled Monolayers Combined with Atomic Layer Deposition

Autor: J. Loyo Prado, Michiel Blauw, Johan Meersschaut, Patrick Verdonck, Silvia Armini, M. R. Baklanov, Mikhail Krishtab, Yiting Sun, J. Swerts
Rok vydání: 2012
Předmět:
Zdroj: ECS Solid State Letters. 1:P42-P44
ISSN: 2162-8750
2162-8742
DOI: 10.1149/2.012202ssl
Popis: Due to its excellent step coverage characteristics, atomic layer depositions (ALD) deposit their material not only on top of underlying surfaces but also into the pores of porous low-k films. In this study, the film characteristics caused by pre-treatments of the low-k material, followed by deposition of self assembled monolayers (SAMs) from an 11-cyanoundecyltrichlorosilane precursor and finally by an HfO2 Atomic Layer Deposition were determined. By adequate optimization of the surface treatment, the SAM deposition and the ALD it was possible to obtain complete pore sealing after ALD, without penetration of the Hf into de porous low-k film.
Databáze: OpenAIRE