Autor:	D. Bauza
Rok vydání:	2010
Předmět:	Charge pumping Materials science Interface (Java) business.industry Optoelectronics business Characterization (materials science)
Zdroj:	ECS Transactions. 28:251-261
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3372580
Popis:	After recalling recent results obtained in the field of the electrical characterization of the Si-SiO2 interface traps in conventional MOS transistors and in MOSFET's having HfO2 as gate dielectric using the charge pumping (CP) technique, the paper focuses on the slope of the CP curves.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::82ea4dadcccde3a841c14eef529bb347 https://doi.org/10.1149/1.3372580 Zobrazit plný text záznamu