Investigation of the effects of byproduct components in Cu plating for advanced interconnect metallization

Autor:	G.Z. You, L. T. Koh, P.D. Foo, C. Y. Li
Rok vydání:	2002
Předmět:	Materials science Annealing (metallurgy) Metallurgy General Engineering chemistry.chemical_element Electromigration Copper Secondary ion mass spectrometry chemistry Forensic engineering Copper plating Grain boundary Metallizing Electroplating
Zdroj:	Microelectronics Journal. 33:229-234
ISSN:	0026-2692
DOI:	10.1016/s0026-2692(01)00122-7
Popis:	This paper discusses the effects of byproduct components generated from a commercially available two components additive package on the copper plating performance for advanced interconnect metallization. The increase in accumulative breakdown products from the sulfur-containing type-A additive during the electroplating (ECP) process, measured using high performance liquid chromatography (HPLC), showed a detrimental effect on via fill performance. These vias with voids may fail by open circuit sooner due to electromigration. Besides, increase of in-film sulfur content was found from the analysis of secondary-ion mass spectrometry (SIMS) on the film electroplated using heavily used plating solution. It was suggested that the increase of incorporated sulfur impurities could render in slower self-annealing rate of the as-plated copper film due to the grain boundary pinning effect.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::82d9bc08a23bd07c3b60ced7e75bf6f0 https://doi.org/10.1016/s0026-2692(01)00122-7 Zobrazit plný text záznamu Full Text from ScienceDirect