Cobalt Electrofill for Future Generations of Contacts and Interconnects

Autor: Jonathan D. Reid, Jian Zhou, Lee J. Brogan, Matthew A. Rigsby, Yihua Liu, Edward C. Opocensky, Tighe A. Spurlin, Natalia V. Doubina
Rok vydání: 2019
Předmět:
Zdroj: 2019 China Semiconductor Technology International Conference (CSTIC).
Popis: In traditional copper damascene interconnect electroplating baths, three organic additives (accelerator, suppressor, leveler) are used to produce void-free superconformal fill. Here, a different mechanism for electroplating void-free cobalt interconnects is described. Superconformal void-free cobalt fill is generated using a sacrificial oxidant (H+) and the addition of a single suppressor-type additive. A differential plating rate on the field and feature bottom can be obtained through process tuning involving waveform, mass transport conditions, pH, and suppressor concentration.
Databáze: OpenAIRE