Defect analysis in fast electron irradiated silicon by Hall and magnetoresistivity means

Autor:	V. Rumbauskas, A. Mekys, J. Storasta, Leonid Makarenko, Juozas Vaitkus
Rok vydání:	2014
Předmět:	Coalescence (physics) Nuclear and High Energy Physics Electron mobility Materials science Condensed matter physics Silicon chemistry Hall effect chemistry.chemical_element Electron Irradiation Instrumentation Fluence
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 338:95-100
ISSN:	0168-583X
Popis:	Two sets of p- and n-conductivity type silicon samples have been irradiated by 6.6 MeV electrons with fluence from 1 to 5 (×10 16 ) e/cm 2 . Hall and magnetoresistivity measurement techniques were used to determine irradiation induced changes. The point defect coalescence was assumed to describe the behavior of the electrical parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::82be2bc4c28e0a58a09ada1a5a945e98 https://doi.org/10.1016/j.nimb.2014.08.007 Zobrazit plný text záznamu Full Text from ScienceDirect