Impact of wafer properties and production processes on the degradation in industrial PERC solar cells
| Autor: | Bram Hoex, Wei Min Li, Xiang Li, Utkarshaa Varshney, Catherine Chan |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Photovoltaic system technology industry and agriculture chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences law.invention chemistry.chemical_compound Silicon nitride chemistry law 0103 physical sciences Solar cell Degradation (geology) Optoelectronics Wafer Crystalline silicon 0210 nano-technology business |
| Zdroj: | 2020 47th IEEE Photovoltaic Specialists Conference (PVSC). |
| DOI: | 10.1109/pvsc45281.2020.9300760 |
| Popis: | Light-induced degradation (LID) and light- and elevated temperature-induced degradation (LeTID) are well-known degradation mechanisms in crystalline silicon (c-Si). PERC cells, which are currently the dominant solar cell device structure, have shown to be more susceptible to LeTID than conventional Al-BSF cells, which makes this degradation a serious concern for the photovoltaic (PV) industry. In this work, we demonstrate the impact of various industrial production steps on the extent of degradation in industrial PERC devices fabricated at a high-volume production line. We observe that the extent of degradation depends on the thickness of the silicon substrate and the silicon nitride deposition method. These results highlight the importance of processing cell parameters on the degradation in silicon cells. |
| Databáze: | OpenAIRE |
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