Phase control of semi-polar and non-polar GaN on cone shaped r-plane patterned sapphire substrates

Autor:	Yun-Li Li, Markus Weyers, Frank Brunner, Kuan-Yung Liao, Snow H. Tseng, Mei-Tan Wang
Rok vydání:	2013
Předmět:	Materials science business.industry Plane (geometry) Nucleation Condensed Matter Physics Epitaxy Molecular physics Inorganic Chemistry Phase (matter) Materials Chemistry Sapphire Optoelectronics Polar business Selectivity Layer (electronics)
Zdroj:	Journal of Crystal Growth. 371:11-16
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2013.01.032
Popis:	The control of formation of semi-polar ( 11 2 ¯ 2 ) and nonpolar a -plane ( 11 2 ¯ 0 ) GaN phases on r -plane cone shaped patterned sapphire substrates (CPSS) by metalorganic vapor-phase epitaxy has been investigated. With a nucleation layer grown at 535 °C and 200 mbar, only semi-polar ( 11 2 ¯ 2 ) GaN is formed. Increasing the nucleation layer temperature to 965 °C, only ( 11 2 ¯ 0 ) GaN is grown at 200 mbar. At reduced reactor pressure of 60 mbar, phase selectivity breaks down and semi-polar ( 11 2 ¯ 2 ) and non-polar ( 11 2 ¯ 0 ) GaN exist simultaneously. The crystalline quality of a -plane GaN on r -plane CPSS can be effectively improved using optimized growth direction control.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::82bb7d812c50b813efe510f466997d2f https://doi.org/10.1016/j.jcrysgro.2013.01.032 Zobrazit plný text záznamu Full Text from ScienceDirect