Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization
| Autor: | Deborah A. Neumayer, Alfred Grill |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Annealing (metallurgy) Analytical chemistry Oxide General Physics and Astronomy Infrared spectroscopy Dielectric Chemical vapor deposition Dissociation (chemistry) chemistry.chemical_compound Chemical engineering chemistry Plasma-enhanced chemical vapor deposition Fourier transform infrared spectroscopy |
| Zdroj: | Journal of Applied Physics. 94:6697-6707 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | Carbon doped oxide dielectrics comprised of Si, C, O, and H (SiCOH) have been prepared by plasma enhanced chemical vapor deposition (PECVD) from mixtures of tetramethylcyclotetrasiloxane (TMCTS) and an organic precursor. The films have been analyzed by determining their elemental composition and by Fourier transform infrared spectroscopy with deconvolution of the absorption peaks. The analysis has shown that PECVD of TMCTS produces a highly crosslinked networked SiCOH film. Dissociation of TMCTS appears to dominate the deposition chemistry as evidenced by the multitude of bonding environments and formation of linear chains and branches. Extensive crosslinking of TMCTS rings occurs through Si–Si, Si–CH2–Si, Si–O–Si, and Si–CH2–O–Si moieties. The films deposited from mixtures of TMCTS and organic precursor incorporate hydrocarbon fragments into the films. This incorporation occurs most probably through the reaction of the organic precursor and the Si–H bonds of TMCTS. Annealing the SiCOH films deposited fro... |
| Databáze: | OpenAIRE |
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